IL420 Ver la hoja de datos (PDF) - Vishay Siliconix
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IL420 Datasheet PDF : 7 Pages
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IL420/ IL4208
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
Derate from 25 °C
Test condition
Symbol
VR
IF
IFSM
Pdiss
Value
6.0
60
2.5
100
1.33
Unit
V
mA
A
mW
mW/°C
Output
Parameter
Peak off-state voltage
RMS on-state current
Single cycle surge current
Power dissipation
Derate from 25 °C
Test condition
Part
IL420
IL4208
Symbol
VDRM
VDRM
ITM
ITSM
Pdiss
Value
600
800
300
3.0
500
6.6
Unit
V
V
mA
A
mW
mW/°C
Coupler
Parameter
Test condition
Symbol
Isolation test voltage 1)
t = 1.0 sec.
VISO
Pollution degree
(DIN VDE 0109)
Creepage distance
Clearance
Comparative tracking 2)
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
VIO = 500 V, Tamb = 100 °C
RIO
Storage temperature range
Tstg
Ambient temperature range
Soldering temperature
max. ≤ 10 sec. dip soldering
≥ 0.5 mm from case bottom
Tamb
Tsld
1) between emitter and detector, climate per DIN 50014, part 2, Nov. 74
2) index per DIN IEC 60112/VDE 0303 part 1, group IIIa per DIN VDE 6110
Value
5300
2
≥ 7.0
≥ 7.0
≥ 175
≥ 1012
≥ 1011
- 55 to + 150
- 55 to + 100
260
Unit
VRMS
mm
mm
Ω
Ω
°C
°C
°C
www.vishay.com
2
Document Number 83629
Rev. 1.4, 26-Apr-04
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