STGB18N40LZ Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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STGB18N40LZ Datasheet PDF : 19 Pages
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Electrical characteristics
STGB18N40LZ, STGD18N40LZ, STGP18N40LZ
2
Electrical characteristics
(TJ=25 °C unless otherwise specified)
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector emitter
VCES(clamped) clamped voltage
(VGE = 0)
V(BR)ECS
Emitter collector
break-down voltage
(VGE = 0)
VGE(clamped)
Gate emitter
clamped voltage
IC = 2 mA
TJ = - 40 °C to 150 °C
IC = 75 mA
IG = ±2 mA
360 390 420 V
20 28
V
12
16 V
ICES
IGES
RGE
Collector cut-off
current
(VGE = 0)
Gate-emitter
leakage current
(VCE = 0)
Gate emitter
resistance
VCE = 15 V, TJ = 150 °C
VCE = 200 V, TJ = 150 °C
VGE = ±10 V
10 µA
100 µA
450 625 830 µA
12 16 22 kΩ
RG
VGE(th)
VCE(sat)
Gate resistance
Gate threshold
voltage
Collector emitter
saturation voltage
1.6
kΩ
VGE =VCE, IC = 1 mA, TJ = -40 °C 1.4
V
VGE =VCE, IC = 1 mA
1.2 1.6 2.3 V
VGE =VCE, IC = 1 mA, TJ =150 °C 0.7
V
VGE = 4.5 V, IC = 10 A
1.35 1.7 V
VGE = 4.5 V, IC = 10 A,
TJ = 150 °C
1.30
V
VGE = 3.8 V, IC = 6 A
1.30
V
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Cies
Coes
Cres
Qg
Input capacitance
Output capacitance
Reverse transfer
capacitance
Gate charge
VCE = 25 V, f = 1 MHz,
VGE = 0
VCE = 280 V, IC = 10 A,
VGE = 5 V
Min. Typ. Max. Unit
- 490 - pF
- 90 - pF
- 5 - pF
- 29 - nC
4/19
Doc ID 14322 Rev 5
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