STGD18N40LZT4(2008_03) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STGD18N40LZT4
(Rev.:2008_03)

EAS 180 mJ - 400 V - internally clamped IGBT

STMicroelectronics 

Electrical characteristics

STGD18N40LZ - STGB18N40LZ

2.1

Electrical characteristics (curves)

Figure 2. Collector-emitter voltage vs

temperature

Figure 3. Collector-emitter voltage vs

temperature

Figure 4. Collector-emitter voltage vs

temperature

Figure 5. Self clamped inductive switch

Figure 6.

IC (6A0)

50

40

Collector current vs collector

emitter voltage @ 25 °C

HV42380

VGE = 8 V

VGE = 4.5 V

→ VGE = 5 V

VGE = 4 V

30

VGE = 3.8 V

20

TC = 25 °C

10

0

0

1

2

3

4

5 VCE (V)

6/18

Figure 7.

IC (6A0)

50

40

30

Collector current vs collector

emitter voltage @ -40 °C

HV42390

VGE = 8 V

VGE = 5 V

VGE = 4.5 V

VGE = 4 V

VGE = 3.8 V

20

TC = -40 °C

10

0

0

1

2

3

4

5 VCE (V)6

Share Link: