STGB18N40LZ-1(2008_03) Ver la hoja de datos (PDF) - STMicroelectronics
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STGB18N40LZ-1 Datasheet PDF : 18 Pages
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STGD18N40LZ - STGB18N40LZ
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES
VECS
IC (1)
ICP (2)
VGE
Collector-emitter voltage (vGE = 0)
Emitter collector voltage (VGE = 0)
Collector current (continuous) at TC = 100 °C
Pulsed collector current
Gate-emitter voltage
PTOT
EAS
Total dissipation at TC = 25 °C
Single pulse energy TC= 25 °C, L = 3 mH, RG = 1 KΩ
EAS Single pulse energy TC=150 °C, L = 3 mH, RG = 1 KΩ
Human body model, R= 1550 Ω, C = 100 pF
ESD Machine model, R = 0, C = 100 pF
Charged device model
Tstg Storage temperature
Tj
Operating junction temperature
1. Calculated according to the iterative formula:
IC(TC) = R-----T----H-----J-----–----C------×-----T-V---J-C--M---E---A-S---X--A----–T----(T---M-C----A-----X----)--(--T----C----,-----I--C-----)
Value
DPAK
IPAK
D²PAK
I²PAK
VCES(clamped)
20
25
30
40
VGE(clamped)
125
150
300
180
8
800
2
– 55 to 175
Unit
V
V
A
A
V
W
mJ
mJ
kV
V
kV
°C
2. Pulse width limited by max. junction temperature allowed
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
DPAK
IPAK
D²PAK
I²PAK
1.2
1
65
62.5
Unit
°C/W
°C/W
3/18
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