7MBR30NE060 Ver la hoja de datos (PDF) - Collmer Semiconductor
Número de pieza
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Fabricante
7MBR30NE060 Datasheet PDF : 7 Pages
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IGBT Module
7MBR30NE060
1000
Switching time vs. RG
Vcc=300V, Ic=30A, VGE=±15V, Tj=25°C
100
10
10
70
60
50
40
30
20
10
0
0
100
Gate resistance : RG [ohm]
FWD
Forward current vs. Forward voltage
VGE=0V
1
2
3
4
Forward voltage : VF [V]
Transient thermal resistance
1
0.1
0.001
0.01
0.1
Pulse width : PW [sec.]
500
400
300
200
100
0
0
Dynamic input characteristics
Tj=25°C
25
20
15
10
50
100
Gate charge : Qg [nC]
5
0
150
Reverse recovery characteristics
trr, Irr, vs. IF
100
10
1
5
0
10
20
30
40
50
Forward current : IF [A]
Reversed biased safe operating area
+VGE=15V, -VGE <= 15V, Tj =< 125°C, RG => 82 ohm
300
250
200
150
100
50
0
1
0
100
200
300
400
500
600
Collector-Emitter voltage : VCE [V]
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