G5N150UF Ver la hoja de datos (PDF) - Fairchild Semiconductor
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Fabricante
G5N150UF Datasheet PDF : 8 Pages
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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 5mA, VCE = VGE
IC = 5A, VGE = 10V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 10V, VGE = 0V,
f = 1MHz
VCC = 600 V
IC = 5A
RG =10Ω
VGE = 10V
Inductive Load
TC = 25°C
VCE = 600 V, IC = 5A
VGE = 10V
Min. Typ. Max. Units
1500
--
--
--
--
V
--
1.0
mA
-- ± 100 nA
2.0
3.0
4.0
V
--
4.7 5.5
V
--
780
--
pF
--
130
--
pF
--
70
--
pF
--
10
--
ns
--
15
--
ns
--
30
50
ns
--
70 120
ns
--
190
--
uJ
--
100
--
uJ
--
290 580
uJ
--
30
45
nC
--
3
5
nC
--
15
25
nC
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
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