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SFT825Z-S Ver la hoja de datos (PDF) - SEOUL SEMICONDUCTOR

Número de pieza
componentes Descripción
Fabricante
SFT825Z-S
Seoul
SEOUL SEMICONDUCTOR Seoul
SFT825Z-S Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
2. Absolute maximum ratings
(Ta=25ºC)
Parameter
Symbol
Red
Value
Green
Blue
Unit
Forward Current
IF
Forward Peak Surge Current
*2
IFM
30
30
30
mA
100
100
100
mA
Reverse Voltage (per die)
VR
5
V
Power Dissipation
81*3
120*3
114*3
Pd
263*4
mW
Operating Temperature
Topr
Storage Temperature
Tstg
-40 ~ +100
ºC
-40 ~ +100
ºC
ESD Sensitivity *5
-
±20,000V HBM (G, B)
±6,000V HBM (R)
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 IFM was measured at TW 1msec of pulse width and D 1/10 of duty ratio.
*3 The value for one LED device.(Single color)
*4 The value for total power dissipation when two and more devices are lit simultaneously.
*5 It is included the zener chip to protect the product from ESD
Rev. 07
April 2009
www.acriche.com
Document No. : SSC-QP-7-07-24 (Rev.00)

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