BC856S Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

NXP Semiconductors. 

NXP Semiconductors

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

−1

VCEsat

(V)

−10−1

(1)

(2)

(3)

006aab433

109

fT

(Hz)

108

006aab434

−10−−210−1

−1

−10

−102

−103

IC (mA)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 8.

Per transistor: Collector-emitter saturation

voltage as a function of collector current;

typical values

107

−10−1

−1

−10

−102

IC (mA)

VCE = −5 V; f = 1 MHz; Tamb = 25 °C

Fig 9. Per transistor: Transition frequency as a

function of collector current; typical values

BC856S_2

Product data sheet

Rev. 02 — 19 February 2009

© NXP B.V. 2009. All rights reserved.

7 of 12

Share Link: