BC856A Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BC856A Datasheet PDF : 14 Pages
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Nexperia
BC856; BC857; BC858
65 V, 100 mA PNP general-purpose transistors
7 Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base
cut-off current
IEBO
emitter-base
cut-off current
VCB = -30 V; IE = 0
VCB = -30 V; IE = 0; Tj = 150 °C
VEB = -5 V; IC = 0
hFE
DC current gain
BC856
VCE = -5 V; IC = -2 mA
BC857
BC856A; BC857A
BC856B; BC857B;
BC858B
BC857C
VCEsat
VBEsat
VBE
fT
Cc
F
collector-emitter
IC = -10 mA; IB = -0.5 mA
saturation voltage
IC = -100 mA; IB = -5 mA
[1]
base-emitter saturation IC = -10 mA; IB = -0.5 mA
voltage
IC = -100 mA; IB = -5 mA
[1]
base-emitter voltage VCE = -5 V; IC = -2 mA
VCE = -5 V; IC = -10 mA
transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz
collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz
noise figure
IC = -200 μA; VCE = -5 V; RS = 2 kΩ; f
= 1 kHz; B = 200Hz
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
Min Typ Max Unit
-
-1
-15
nA
-
-
-4
μA
-
-
-100 nA
125
-
475
125
-
800
125
-
250
220
-
475
420
-
-
-
-
-600
-
100
-
-
-
-75
-250
-700
-850
-650
-
-
4.5
2
800
-300
-650
-
-
-750
-820
-
-
10
mV
mV
mV
mV
mV
mV
MHz
pF
dB
BC856_BC857_BC858
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 16 April 2018
© Nexperia B.V. 2018. All rights reserved.
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