MCT276 Ver la hoja de datos (PDF) - Vishay Siliconix
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Fabricante
MCT276 Datasheet PDF : 9 Pages
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VISHAY
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
IF = 20 mA
VR = 3.0 V
VR = 0, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.5
V
IR
10
µA
CO
25
pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-base breakdown
voltage
Collector-emitter leakage
current
Test condition
IC = 10 µA, IF = 0 mA
IE = 10 µA, IF = 0 mA
IC = 10 µA, IF = 0 mA
VCE = 10 V, IF = 0 mA
Symbol
Min
Typ.
Max
Unit
BVCEO
30
V
BVECO
7.0
V
BVCBO
70
V
ICEO
50
nA
Coupler
Parameter
Resistance, input to output
Capacitance (input-output)
Collector-emitter saturation
voltage
Test condition
VIO = 500 VDC
ICE = 2.0 mA, IF = 16 mA
Symbol
Min
Typ.
Max
Unit
RIO
1012
Ω
CIO
0.5
pF
VCEsat
0.4
V
Current Transfer Ratio
Parameter
DC Current Transfer Ratio
Test condition
VCE = 10 V, IF = 10 mA
Current Transfer Ratio
(collector-emitter)
VCE = 0.4 V, IF = 16 mA
Part
Symbol
Min
Typ.
Max
Unit
MCT270 CTRDC
50
%
MCT271 CTRDC
45
90
%
MCT272 CTRDC
75
150
%
MCT273 CTRDC
125
250
%
MCT274 CTRDC
225
400
%
MCT275 CTRDC
70
210
%
MCT276 CTRDC
15
60
%
MCT277 CTRDC
100
%
MCT271 CTRCE
12.5
%
MCT272 CTRCE
12.5
%
MCT273 CTRCE
12.5
%
MCT274 CTRCE
12.5
%
MCT275 CTRCE
12.5
%
MCT276 CTRCE
12.5
%
MCT277 CTRCE
40
%
Document Number 83724
Rev. 1.4, 19-Apr-04
www.vishay.com
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