DF1506S Ver la hoja de datos (PDF) - Vishay Semiconductors
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DF1506S Datasheet PDF : 4 Pages
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DF15005S–DF1510S
Vishay Lite–On Power Semiconductor
Characteristics (Tj = 25_C unless otherwise specified)
2.0
60 Hz resistive or inductive load
100
1.5
1.0
10
Tj = 25°C
f = 1 MHz
Vsig=50 mV p–p
0.5
0
40 60 80 100 120 140
15600
Tamb – Ambient Temperature ( °C )
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
10
1.0
0.1
0.01
0.4
15601
Tj = 25°C
IF Pulse Width = 300 µs
2% Duty Cycle
0.6 0.8 1.0 1.2 1.4
VF – Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
60
Single Half Sine–Wave
(JEDEC Method)
50
40
30
20
10
15602
0
1
10
100
Number of Cycles at 60 Hz
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
1
1
15603
10
100
VR – Reverse Voltage ( V )
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
100
Tj = 125°C
10
1.0
0.1
Tj = 25°C
0.01
0 20 40 60 80 100 120 140
15604
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
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