CMST2222A
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
150
NF
VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz
4.0
td
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
10
tr
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
25
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
SOT-323 CASE - MECHANICAL OUTLINE
UNITS
pF
pF
kΩ
kΩ
x10-4
x10-4
μS
μS
ps
dB
ns
ns
ns
ns
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: 1PC
R4 (9-February 2010)