TZM5246B Ver la hoja de datos (PDF) - Vishay Siliconix

Número de pieza

componentes Descripción

Fabricante

TZM5246B

Silicon Z–Diodes

Vishay Siliconix 

Silicon Z–Diodes

Features

D Very sharp reverse characteristic

D Very high stability

D Electrical data identical with the devices

1N5221B...1N5267B

D Low reverse current level

D VZ–tolerance ± 5%

Applications

Voltage stabilization

TZM5221B...TZM5267B

Vishay Telefunken

94 9371

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Power dissipation

Z–current

RthJA<300K/W, Tamb=25°C

Junction temperature

Storage temperature range

Type

Symbol Value Unit

PV

500

mW

IZ

PV/VZ

mA

Tj

175

°C

Tstg –65...+175 °C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Junction ambient on PC board 50mmx50mmx1.6mm

Symbol

Value

Unit

RthJA

500

K/W

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Forward voltage

IF=200mA

Type

Symbol Min Typ Max Unit

VF

1.1 V

Document Number 85609

Rev. 2, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

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