E-LIS3L02AS5TR Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

E-LIS3L02AS5TR

MEMS INERTIAL SENSOR: 3-axis - ±2g/6g LINEAR ACCELEROMETER

STMicroelectronics 

LIS3L02AS5

2 Mechanical and Electrical Specifications

2.3 Absolute maximum ratings

Stresses above those listed as “absolute maximum ratings” may cause permanent damage to

the device. This is a stress rating only and functional operation of the device under these

conditions is not implied. Exposure to maximum rating conditions for extended periods may

affect device reliability.

Table 4. Absolute maximum ratings

Symbol

Ratings

Maximum Value

Unit

Vdd Supply voltage

Vin Input Voltage on Any Control pin (FS, PD, ST)

APOW Acceleration (Any axis, Powered, Vdd=5.0V)

-0.3 to 7

V

-0.3 to Vdd +0.3

V

3000g for 0.5 ms

10000g for 0.1 ms

3000g for 0.5 ms

AUNP Acceleration (Any axis, Not powered)

) TSTG Storage Temperature Range

roduct(s ESD Electrostatic Discharge Protection

10000g for 0.1 ms

-40 to +125

°C

2 (HBM)

kV

200 (MM)

V

1500 (CDM)

V

te P This is a Mechanical Shock sensitive device, improper handling can cause

le permanent damages to the part

o This is an ESD sensitive device, improper handling can cause permanent damages

bs to the part

t(s) - O 2.4 Terminology

c Sensitivity describes the gain of the sensor and can be determined by applying 1g

u acceleration to it. As the sensor can measure DC accelerations this can be done easily by

rod pointing the axis of interest towards the center of the earth, note the output value, rotate the

sensor by 180 degrees (point to the sky) and note the output value again thus applying ±1g

P acceleration to the sensor. Subtracting the larger output value from the smaller one and dividing

te the result by 2 will give the actual sensitivity of the sensor. This value changes very little over

letemperature (see sensitivity change vs. temperature) and also very little over time. The

oSensitivity Tolerance describes the range of Sensitivities of a large population of sensors.

bs Zero-g level describes the actual output signal if there is no acceleration present. A sensor in a

O steady state on an horizontal surface will measure 0g in X axis and 0g in Y axis whereas the Z

axis will measure +1g. The output is ideally for a 5.0V powered sensor Vdd/2 = 2500mV. A

deviation from ideal 0-g level (2500mV in this case) is called Zero-g offset. Offset of precise

MEMS sensors is to some extend a result of stress to the sensor and therefore the offset can

slightly change after mounting the sensor onto a printed circuit board or exposing it to extensive

mechanical stress. Offset changes little over temperature - see “Zero-g Level Change vs.

Temperature”- the Zero-g level of an individual sensor is very stable over lifetime. The Zero-g

level tolerance describes the range of zero-g levels of a population of sensors.

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