SFH6343T Ver la hoja de datos (PDF) - Infineon Technologies
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SFH6343T Datasheet PDF : 5 Pages
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FEATURES
• Surface Mountable
• Industry Standard SOIC-8 Footprint
• Compatible with Infrared Vapor Phase Reflow and
Wave Soldering Processes
• Isolation Voltage, 3000 VRMS
• Very High Common Mode Transient Immunity:
15000 V/µs at VCM=1500 V Guaranteed (SFH6343)
• High Speed: 1.0 Mb/s
• TTL Compatible
• Guaranteed AC and DC Performance Over
Temperature: 0°C to 70°C
• Open Collector Output
• Pin Compatible with HP Optocouplers
SFH6315T—HCPL0500
SFH6316T—HCPL0501
SFH6343T—HCPL0453
•
V
DE
VDE 0884 Available with Option 1
APPLICATIONS
• Line Receivers
• Logic Ground Isolation
• Analog Signal Ground Isolation
• Replace Pulse Transformers
DESCRIPTION
The SFH6315T/16T/43T, high speed optocouplers, each
consists of a GaAlAs infrared emitting diode, optically
coupled with an integrated photodetector and a high
speed transistor. The photodetector is junction isolated
from the transistor to reduce miller capacitance effects.
The open collector output function allows circuit designers
to adjust the load conditions when interfacing with differ-
ent logic systems such as TTL, CMOS, etc.
Because the SFH6343T has a Faraday shield on the
detector chip, it can also reject and minimize high input to
output common mode transient voltages. There is no base
connection, further reducing the potential electrical noise
entering the package.
The SFH6315T/16T/43T are packaged in industry stan-
dard SOIC-8 packages and are suitable for surface
mounting.
SFH6315T
SFH6316T
SFH6343T
High Speed Optocoupler
Package Dimensions in Inches (mm)
SFH6315/6
NC 1
8 VCC
A2
7 Base VB
.120±.002
(3.05±.05)
K3
6C
NC 4
5E
.240
(6.10)
Pin 1
SFH6343
CL(.135.941±±.0.0052)
NC 1
A2
8 VCC
7 NC
.016
(.41)
.192±.005
(4.88±.13)
K3
6C
NC 4
5E
.015±.002
(.38±.05)
7°
40° .058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
.050 (1.27) typ.
.021 (.53)
.020±.004
(.51±.10)
2 plcs.
5° max.
R.010
(.25) max.
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage......................................................................... 3.0 V
DC Forward Current.................................................................25 mA
Surge Forward Current (tp≤1.0 µs, 300 pulses/s)......................1.0 A
Total Power Dissipation (TA≤70°C) ......................................... 45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage................................................................ –0.5 to 30 V
Output Voltage.............................................................. –0.5V to 25 V
Output Current........................................................................8.0 mA
Total Power Dissipation (TA≤70°C) ....................................... 100 mW
Package
Isolation Test Voltage
between emitter and detector.......................................3000 VRMS
(refer to climate DIN 40046, part 2, Nov. 74)
Pollution Degree (DIN VDE 0110).................................................... 2
Creepage............................................................................. ≥4.0 mm
Clearance ............................................................................ ≥4.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 .......................................... 175
Isolation Resistance
VIO=500 V, TA=25°C, RISOL (Note 2) ................................. ≥1012 Ω
VIO=500 V, TA=100°C, RISOL(Note 2) ................................ ≥1011 Ω
Storage Temperature Range .................................. –55°C to +150°C
Ambient Temperature Range.................................. –55°C to +100°C
Junction Temperature .............................................................. 100°C
Soldering Temperature (t=10 s max.)
Dip soldering: distance to seating plane ≥1.5 mm .............. 260°C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–277
May 17, 2000-09
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