BCR5KM Ver la hoja de datos (PDF) - Renesas Electronics
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componentes Descripción
Fabricante
BCR5KM Datasheet PDF : 13 Pages
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Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current Tj=125°C, VDRM applied
VTM
On-state voltage
Tc=25°C, ITM=7A, Instantaneous measurement
VFGT !
VRGT !
Gate trigger voltage ✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
IFGT !
IRGT !
Gate trigger current ✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
IRGT #
#
VGD
Rth (j-c)
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
Junction to case ✽4
Rth (j-a) Thermal resistance
Junction to ambient
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀)
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Limits
Unit
Min. Typ. Max.
—
— 2.0
mA
—
— 1.5
V
—
— 1.5
V
—
— 1.5
V
—
— 1.5
V
—
—
15 ✽3 mA
—
—
15 ✽3 mA
—
—
15 ✽3 mA
0.2
—
—
V
—
— 3.8 °C/ W
—
—
50 °C/ W
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
102
7
5
3
2
101
7
5
3
Tj = 25°C
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
100
90
80
70
60
50
40
30
20
10
0
100
RATED SURGE ON-STATE
CURRENT
2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
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