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MJ10015 Ver la hoja de datos (PDF) - ON Semiconductor

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MJ10015 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ON Semiconductort
SWITCHMODEt Series
NPN Silicon Power Darlington
MJ10015
MJ10016
Transistors with Base-Emitter
Speedup Diode
50 AMPERE
NPN SILICON
POWER DARLINGTON
The MJ10015 and MJ10016 Darlington transistors are designed for
high–voltage, high–speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for
TRANSISTORS
400 AND 500 VOLTS
250 WATTS
line–operated SWITCHMODE applications such as:
Switching Regulators
Motor Controls
Inverters
Solenoid and Relay Drivers
Fast Turn–Off Times
1.0 µs (max) Inductive Crossover Time — 20 Amps
2.5 µs (max) inductive Storage Time — 20 Amps
CASE 197–05
TO–204AE TYPE
(TO–3 TYPE)
Operating Temperature Range –65 to +200_C
Performance Specified for
Reversed Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BaseCurrent — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 100_C
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering Purposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1/8from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
50 8
Symbol
VCEO
VCEV
VEB
IC
ICM
IB
IBM
PD
TJ, Tstg
Symbol
RθJC
TL
MJ10015
MJ10016
400
500
600
700
8.0
50
75
10
15
250
143
1.43
–65 to +200
Max
0.7
275
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 3
Publication Order Number:
MJ10015/D

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