IDT70V07L(1996) Ver la hoja de datos (PDF) - Integrated Device Technology

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IDT70V07L
(Rev.:1996)

HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM

Integrated Device Technology 

IDT70V07S/L

HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM

COMMERCIAL TEMPERATURE RANGE

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

Output Load

3.3V

GND to 3.0V

5ns Max.

1.5V

1.5V

Figures 1 and 2

2943 tbl 10

DATAOUT

BUSY

INT

435Ω

590Ω

30pF

2943 drw 05

Figure 1. AC Output Test Load

DATAOUT

435Ω

3.3V

590Ω

5pF

2943 drw 06

Figure 2. Output Test Load

(for tLZ, tHZ, tWZ, tOW)

* Including scope and jig.

AC ELECTRICAL CHARACTERISTICS OVER THE

OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(4)

IDT70V07X25 IDT70V07X35

IDT70V07X55

Symbol

Parameter

Min. Max. Min.

READ CYCLE

tRC

Read Cycle Time

25

—

35

tAA

Address Access Time

tACE

Chip Enable Access Time(3)

—

25

—

—

25

—

tAOE

Output Enable Access Time

—

15

—

tOH

Output Hold from Address Change

tLZ

Output Low-Z Time(1, 2)

tHZ

Output High-Z Time(1, 2)

tPU

Chip Enable to Power Up Time(2)

tPD

Chip Disable to Power Down Time(2)

tSOP

Semaphore Flag Update Pulse (OE or SEM)

3

—

3

3

—

3

—

15

—

0

—

0

—

25

—

15

—

15

tSAA

Semaphore Address Access Time

—

35

—

NOTES:

1. Transition is measured ±200mV from Low or High-impedance voltage with Output Test Load (Figure 2).

2. This parameter is guaranteed by device characterization, but is not production tested.

3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.

4. "X" in part numbers indicates power rating (S or L).

Max. Min.

—

55

35

—

35

—

20

—

—

3

—

3

20

—

—

0

35

—

—

15

45

—

Max. Unit

— ns

55 ns

55 ns

30 ns

— ns

— ns

25 ns

— ns

50 ns

— ns

65 ns

2943 tbl 11

TIMING OF POWER-UP POWER-DOWN

CE

tPU

ICC

50%

ISB

tPD

50%

2943 drw 07

6.37

6

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