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MN2310H/B Ver la hoja de datos (PDF) - Micro Networks

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MN2310H/B Datasheet PDF : 8 Pages
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MN2310 Series
Low Noise JFET
Instrumentation Amplifiers
The n-type JFET front end in the MN2310 Series
Low Noise Instrumentation Amplifiers produces
exceptionally low 1/f noise. A typical noise density
of the E parameter of the MN2310 is shown below.
n
1
-140
-150
MN2310 1/f Spectral Density
10
100
1000
10000
Gain
20dB per
Octave
f 3dB
Frequency
-160
-170
-180
Frequency
High CMR Amplifier - The MN2310 Series is
shown below connected as a high-CMR ac ampli-
fier. The ac configuration uses a single bypass
capacitor (Cext) to set the low frequency 3dB roll-
off point. The low frequency roll-off as a function
of the value of Cext is given below and depicted in
the following figure.
Adjusting Device Gain - The gain of the MN2310
Series Amplifiers is predetermined by three resistors,
two of which are laser trimmed thin film resistor
networks. However, access to the gain setting resis-
tors (R7 and R9) for the MN2310 Series is provided
for user-defined gains via external resistors. Resis-
tors R7 and R9 are internal to the MN2310 Series
amplifiers and have values as follows:
Device
MN2310
MN2311
MN2312
Fixed Gain
30dB
40dB
50dB
R7(k) R9()
1.42 46
4.59 46
14.50 46
F
3dB
=
1/2π
RC
where
R
=
46
Gain Formula:
+V Supply
R/2
40
0.1 uF
Gain (dB) = 20 Log (R7 / Req + 0.5)
where Req = R9 // Rext for an increase in gain or
where Req = R9 + Rext to decrease gain.
+
V/2
1
-
+
V/2
Cext
MN2310
44
-
2
14
41
30
R/2
0.1 uF
,,,,,,,,,,,,,, -V Supply
324 Clark St., Worcester, MA 01606
Tel. (508) 852-5400 • FAX (508) 853-8296
E-Mail – sales@mnc.com
Web Site – http://www.mnc.com

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