DB1000 Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

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DB1000

10 AMP SILICON BRIDGE RECTIFIERS

Diotec Semiconductor Germany  

DIOTEC ELECTRONICS CORP.

18020 Hobart Blvd., Unit B

Gardena, CA 90248 U.S.A

Tel.: (310) 767-1052 Fax: (310) 767-7958

Data Sheet No. BRDB-1000-1B

ABDB-1000-1B

FEATURES

PRV Ratings from 50 to 1000 Volts

Surge overload rating to 150 Amps peak

Reliable low cost molded plastic construction

Ideal for printed circuit board applications

UL RECOGNIZED - FILE #E124962

MECHANICAL DATA

Case: Molded plastic, U/L Flammability Rating 94V-0

Terminals: Round silver plated copper pins

Soldering: Per MIL-STD 202 Method 208 guaranteed

Polarity: Marked on side of case; positive lead at beleveled corner

Mounting Position: Any. Through hole provided for #6 screw

Weight: 0.18 Ounces (5.4 Grams)

MECHANICAL SPECIFICATION

ACTUAL SIZE

DT

DB1004

SERIES DB1000-DB1010 and ADB1004-ADB1008

BH

AC

AC

LL

_

+

LD

D1

+

D1

BL

_

BL

MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS

Ratingsat25°Cambienttemperature unlessotherwisespecified.

Single phase, half wave,60Hz, resistive or inductive load.

Forcapacitive loads, derate currentby20%.

PARAMETER (TEST CONDITIONS)

Series Number

Maximum DC Blocking Voltage

SYMBOL CONTROLLED

AVALANCHE

RATINGS

NON-CONTROLLED

AVALANCHE

UNITS

ADB ADB ADB DB DB DB DB DB DB DB

1004 1006 1008 1000 1001 1002 1004 1006 1008 1010

VRM

Working Peak Reverse Voltage

VRWM 400 600 800 50 100 200 400 600 800 1000 VOLTS

Maximum Peak Recurrent Reverse Voltage

VRRM

RMS Reverse Voltage

Power Dissipation in V(BR) Region for 100 µS Square Wave

Continuous Power Dissipation in V(BR) Region

@ THS=80 oC (Heat Sink Temp)

Thermal Energy (Rating for Fusing)

Peak Forward Surge Current (8.3 mSec single half sine wave

superimposed on rated load)

Average Forward

Rectified Current

@ TC = 50 oC (Note 1)

@ TC = 100 oC (Note 1); TA = 50 oC (Note 2)

Junction Operating and Storage Temperature Range

VR (RMS)

PRM

PR

280 420 560 35

500

2

70 140 280 420 560 700

n/a

WATTS

n/a

I2t

64

AMPS2

SEC

IFSM

IO

TJ, TSTG

150

10

8

-55 to +150

AMPS

°C

Minimum Avalanche Voltage

Maximum Avalanche Voltage

Maximum Forward Voltage (Per Diode) at 5 Amps DC

Maximum Reverse Current at Rated VRM

@ TA = 25oC

@TA = 100 oC

Minimum Insulation Breakdown Voltage (Circuit to Case)

Typical Thermal Resistance (on Heat Sink)

Junction to Ambient

Junction to Case

NOTES: (1) Unit Mounted on Metal Chassis

(2) Unit Mounted on PC Board

V(BR) Min

V(BR) Max

VFM

IRM

VISO

RθJA

RθJC

450 650 850

900 1100 1300

n/a

n/a

1.1

5

1

2000

2.5

5.0

VOLTS

µA

mA

VOLTS

oC/W

4.97fbrdb010

F35

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