KSC1173YTSTUA Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

KSC1173YTSTUA

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(on)

fT

Cob

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Base Width Product

Output Capacitance

IC = 500μA, IE = 0

IC = 10mA IB = 0

IE = -1mA, IC = 0

VCB = 20V, IE = 0

VEB = 5V, IC = 0

VCE = 2V, IC = 0.5A

VCE = 2V, IC = 2.5A

IC = 2A, IB = 0.2A

VCE = 2V, IC = 0.5A

VCE = 2V, IC = 0.5A

VCB = 10V, IE =0,

f = 1MHz

hFE Classification

Classification

hFE1

O

70 ~ 140

Min.

30

30

5

70

25

Typ.

0.3

0.75

100

35

Max. Units

V

V

1.0

μA

1.0

μA

240

0.8

V

1.0

V

MHz

pF

Y

120 ~ 240

© 2009 Fairchild Semiconductor Corporation

KSC1173 Rev. A2

2

www.fairchildsemi.com

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