IRF9530STRR Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

IRF9530STRR

Power MOSFET

Vishay Semiconductors 

www.vishay.com

IRF9530S, SiHF9530S

Vishay Siliconix

D.U.T.

+

2

-

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

3

• Low leakage inductance

current transformer

-

4

1

Rg

• dV/dt controlled by Rg

• ISD controlled by duty factor “D”

• D.U.T. - device under test

+

- VDD

Compliment N-channel of D.U.T. for driver

1 Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = -10 V a

2 D.U.T. ISD waveform

Reverse

recovery

current

3

Body diode forward

current

dI/dt

D.U.T. VSD waveform

Diode recovery

dV/dt

Re-applied

voltage

4 Inductor current

Body diode forward drop

Ripple ≤ 5 %

Note

a VGS = -5 V for logic level and -3 V drive devices

Fig. 14 - For P-Channel

VDD

ISD

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91077.

S16-0754-Rev. D, 02-May-16

6

Document Number: 91077

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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