IRF9530NPBF Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRF9530NPBF

HEXFET® Power MOSFET

International Rectifier 

IRF9530NPbF

VDS

L

RG

-20V

tp

D.U.T

IAS

0.01Ω

DRIVER

VDD

A

15V

Fig 12a. Unclamped Inductive Test Circuit

IAS

tp

V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

-10V

QGS

VG

QG

QGD

Charge

Fig 13a. Basic Gate Charge Waveform

700

ID

TOP

-3.4A

600

-5.9A

BOTTOM -8.4A

500

400

300

200

100

0

25

50

75 100 125 150 175

Starting TJ, Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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