IRF9530NPBF Ver la hoja de datos (PDF) - International Rectifier

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componentes Descripción

Fabricante

IRF9530NPBF

HEXFET® Power MOSFET

International Rectifier 

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

10

IRF9530NPbF

100

10

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

1

-4.5V

-4.5V

1

0.1

0.1

20µs PULSE WIDTH

Tc = 25°C

A

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

0.1

0.1

20µs PULSE WIDTH

TC = 175°C

A

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 25°C

10

TJ = 175°C

1

VDS = -50V

20µs PULSE WIDTH

0.1

4

5

6

7

8

9

10 A

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

2.5 ID = -14A

2.0

1.5

1.0

0.5

VGS = -10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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