IRF9530 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

IRF9530

Power MOSFET

Vishay Semiconductors 

www.vishay.com

IRF9530, SiHF9530

Vishay Siliconix

VDS

Vary tp to obtain

required IAS

RG

- 10 V

tp

L

D.U.T

IAS

0.01 Ω

-

+

V

DD

A

Fig. 12a - Unclamped Inductive Test Circuit

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

1200

1000

800

ID

Top - 4.9 A

- 8.5 A

Bottom - 12 A

600

400

200

0 VDD = - 25 V

25

50

75

100 125 150 175

91076_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

- 10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

-

D.U.T. + VDS

VGS

- 3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

S16-0754-Rev. C, 02-May-16

5

Document Number: 91076

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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