IRF9530 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

IRF9530

Power MOSFET

Vishay Semiconductors 

www.vishay.com

101

175 °C

25 °C

100

10-1

1.0

91076_07

VGS = 0 V

2.0

3.0

4.0

5.0

- VSD, Source-to-Drain Voltage (V)

Fig. 7 -Typical Source-Drain Diode Forward Voltage

103

5

Operation in this area limited

by RDS(on)

2

102

5

10 µs

2

100 µs

10

1 ms

5

2

1

5

2

0.1

0.1 2

10 ms

TC = 25 °C

TJ = 175 °C

Single Pulse

5 1 2 5 10 2

5 102 2

5 103

91076_08

- VDS, Drain-to-Source Voltage (V)

Fig. 8 -Maximum Safe Operating Area

10

IRF9530, SiHF9530

Vishay Siliconix

12

10

8

6

4

2

0

25

91076_09

50

75 100 125 150 175

TC, Case Temperature (°C)

Fig. 9 -Maximum Drain Current vs. Case Temperature

VDS

VGS

RG

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

1 D = 0.5

0.2

0.1

0.1 0.05

0.02

0.01

10-2

10-5

91076_11

Single Pulse

(Thermal Response)

10-4

10-3

10-2

0.1

t1, Rectangular Pulse Duration (s)

PDM

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

1

10

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S16-0754-Rev. C, 02-May-16

4

Document Number: 91076

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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