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TCS450 Ver la hoja de datos (PDF) - GHz Technology

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TCS450 Datasheet PDF : 1 Pages
1
TCS450
450 Watts, 45 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The TCS450 s a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz, with the
pulse width and duty required for TCAS applications. The device has gold
thin-film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input prematch for broadband capaility. Low thermal
resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
1166 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
55 Volts
3.5 Volts
40 Amps
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55KT Style 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
Pd
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Pulse Droop
Load Mismatch Tolerance
F = 1030 MHz
Vcc = 45 Volts
PW = 32 µsec
DF = 1%
F = 1030MHz
MIN
450
6.2
TYP MAX UNITS
100
45
0.25
6:1
Watts
Watts
dB
%
dB
BVebo1
BVces
Cob
hFE1
θjc2
Emitter to Base Breakdown
Ie = 30 mA
3.5
Collector to Emitter Breakdown Ic = 30 mA
55
Capacitance Collector to Base Vcb = 50 Volts
DC - Current Gain
Ic = 500 mA, Vce = 5 V 10
Thermal Resistance
Note 1: Not measureable due to internal DC Return.
2: At rated pulse conditions
Revision 2, July 7, 1997
Volts
Volts
pF
0.15 oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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