2SC5338 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

2SC5338

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NEC => Renesas Technology 

S-PARAMETER

VCE = 10 V, IC = 100 mA

f (MHz)

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

S11

MAG

ANG

.651

− 64.8

.520 − 106.4

.460 − 126.5

.420 − 140.1

.395 − 150.0

.384 − 156.3

.367 − 162.9

.350 − 165.5

.343 − 169.3

.339 − 177.1

.316

177.9

.315

179.4

.309

170.1

.287

165.6

.303

161.9

.293

157.9

.301

153.7

.303

150.7

.306

148.8

.311

147.2

S21

MAG

ANG

21.694

136.2

14.288

114.6

10.214

104.5

7.822

98.1

6.355

93.2

5.314

90.3

4.569

87.8

4.037

85.6

3.649

83.8

3.353

82.8

3.193

81.0

3.217

78.4

3.026

69.1

2.592

65.9

2.374

65.2

2.179

63.5

2.054

62.4

1.945

61.4

1.840

60.5

1.753

59.7

S12

MAG

ANG

.029

62.4

.042

53.0

.051

56.6

.061

58.4

.070

65.6

.077

67.0

.089

70.9

.095

71.6

.106

72.5

.117

73.9

.125

75.0

.142

75.5

.152

78.1

.164

75.6

.173

80.5

.187

78.1

.200

78.2

.214

75.9

.225

75.4

.240

75.0

2SC5338

S22

MAG

ANG

.588

− 43.4

.435

− 62.7

.330

− 73.0

.284

− 77.1

.270

− 78.8

.257

− 82.2

.258

− 82.1

.241

− 82.9

.257

− 79.5

.258

− 79.3

.261

− 73.6

.311

− 72.3

.324

− 80.4

.280

− 81.0

.308

− 82.6

.295

− 81.4

.307

− 78.7

.313

− 82.1

.321

− 82.8

.332

− 86.9

8

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