2SC5338 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

2SC5338

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NEC => Renesas Technology 

2SC5338

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product

Feed-back Capacitance

Insertion Power Gain

Nose Figure

2nd Order

Intermoduration

Distortion

3rd Order

Intermoduration

Distortion

Symbol

ICBO

IEBO

hFE

fT

Cre

|S21e|2

NF

IM2

IM3

Test Conditions

VCB = 20 V, IE = 0

VEB = 2 V, IC = 0

VCE = 5 V, IC = 50 mANote2

VCE = 5 V, IC = 50 mA

VCB = 5 V, IE = 0, f = 1 MHzNote3

VCE = 5 V, IC = 50 mA, f = 1 GHz

VCE = 5 V, IC = 50 mA, f = 1 GHz

IC = 50 mA

Vin = 105 dB µV/75 Ω

f = 190 MHz − 90 MHz

VCE = 5 V

VCE = 10 V

IC = 50 mA

Vin = 105 dB µV/75 Ω

f = 2 × 190 MHz − 200 MHz

VCE = 5 V

VCE = 10 V

MIN.

50

8.5

TYP.

6.0

1.0

10

− 55

− 63

− 76

− 83

MAX.

1.5

1.5

250

2.0

3.5

Unit

µA

µA

GHz

pF

dB

dB

dB

dB

Notes 2. Pulse measurement: PW ≤ 350 µS, Duty Cycle ≤ 2 %

3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.

hFE Classification

Rank

Marking

hFE

SH

SH

50 to 100

SF

SF

80 to 160

SE

SE

125 to 250

2

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