2SC5338 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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Fabricante

2SC5338

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NEC => Renesas Technology 

PRELIMIDNAATRAY SDHAETEATSHEET

Silicon Transistor

2SC5338

NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION

The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply

voltage (VCE = 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such.

FEATURES

• High gain

|S21 |2 = 10 dB TYP., @VCE = 5 V, Ic = 50 mA, f = 1 GHz

• Low distortion and low voltage

IM2 = −55 dB TYP., IM3 = −76 dB TYP.

@VCE = 5 V, Ic = 50 mA, Vin = 105 dB µV/75 Ω

• New power mini-mold package version of a 4-pin type

gain-improved on the 2SC4703

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PACKAGE DIMENSIONS

(in millimeters)

4.5±0.1

1.6±0.2

1.5±0.1

C

EB E

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

Rating

Unit

VCBO

25

V

VCEO

12

V

VEBO

2.5

V

IC

150

mA

PT Note1

1.8

W

Tj

150

°C

Tstg

–65 to +150

°C

0.42

±0.06

0.42

±0.06

1.5 0.46

3.0 ±0.06

0.25±0.02

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

Note 1. 0.7 mm × 16 cm2 double sided ceramic substrate (Copper plaiting)

Document No. P10940EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

©

1996

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