Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
TO-92
-0.25A
* ID (continuous) is limited by max rated Tj.
-0.8A
VP0104/VP0106/VP0109
Power Dissipation
@ TC = 25oC
1.0W
θjc
oC/W
125
θja
oC/W
170
IDR*
-0.25A
IDRM
-0.8A
Electrical Characteristics (@ 25oC unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
IDSS
Parameter
Drain-to-Source
VP0109
Breakdown Voltage
VP0106
VP0104
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min Typ Max Unit
-90
-60
V
-40
-1.5
-3.5
V
5.8
6.5 mV/oC
-1.0 -100
nA
-10
µA
-1
ID(ON)
ON-State Drain Current
-0.15 -0.25
-0.50 -1.2
RDS(ON)
Static Drain-to-Source
ON-State Resistance
11
15
6.0
8.0
∆RDS(ON) Change in RDS(ON) with Temperature
0.55
1.0
GFS
Forward Transconductance
150 190
CISS
Input Capacitance
45
60
COSS
Common Source Output Capacitance
22
30
CRSS
Reverse Transfer Capacitance
3
8
td(ON)
Turn-ON Delay Time
4
6
tr
Rise Time
3
10
td(OFF)
Turn-OFF Delay Time
8
12
tf
Fall Time
4
10
VSD
Diode Forward Voltage Drop
-1.2 -2.0
trr
Reverse Recovery Time
400
Notes:
1. All D.C. parameters 100% tested at 25oC unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
A
Ω
%/oC
m
pF
ns
V
ns
Conditions
ID = -1.0mA, VGS = 0V
VGS = VDS, ID = -1.0mA
ID = -1.0mA, VGS = VDS
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125oC
VGS = -5V, VDS = -25V
VGS = -10V, VDS = -25V
VGS = -5V, ID = -0.1A
VGS = -10V, ID = -0.5A
VGS = -10V, ID = -0.5A
VDS = -25V, ID = -0.5A
VGS = 0V, VDS = -25V
f = 1 MHz
VDD = -25V
ID = -0.5A
RGEN = 25Ω
ISD = -1.0A, VGS = 0V
ISD = -1.0A, VGS = 0V
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
VDD
10%
t(ON)
td(ON)
tr
90%
t(OFF)
td(OFF)
tF
90%
90%
10%
10%
PULSE
GENERATOR
Rgen
INPUT
D.U.T.
OUTPUT
RL
VDD
2