STTH110 Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

STTH110

High voltage ultrafast rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STTH110

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

V(RMS)

IF(AV)

Repetitive peak reverse voltage

Voltage rms

SMA

Average forward current

DO-41

IFSM

Forward Surge current

t = 8.3 ms

TL = 110 °C δ = 0.5

TL = 125 °C δ = 0.5

SMA

DO-41

1000

V

700

V

1

A

1

18

A

20

Tstg Storage temperature range

Tj Maximum operating junction temperature

-50 to + 175 °C

175

°C

Table 3. Thermal resistance

Symbol

Parameter

Rth(j-l)

Rth(j-a)

Junction to lead

Junction to ambient

Lead length = 10 mm

Lead length = 10 mm

SMA

DO-41

DO-41

Value

30

45

110

Unit

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Tests conditions

Min. Typ. Max. Unit

Tj = 25 °C

IR Reverse leakage current

VR = 1000 V

Tj = 125 °C

VF Forward voltage drop

Tj = 25 °C

IF = 1 A

Tj = 150 °C

10

µA

50

1.7

V

0.98 1.42

To evaluate the conduction losses use the following equation:

P = 1.20 x IF(AV) + 0.225 IF2(RMS)

Symbol

Table 5. Dynamic electrical characteristics

Parameter

Tests conditions

Min. Typ. Max. Unit

IF = 0.5, A

trr Reverse recovery time Tj = 25 °C Irr = 0.25 A,

IR = 1 A

tfr Forward recovery time

IF = 1 A,

VFP

Forward recovery

voltage

Tj = 25 °C dIF/dt = 50 A/ms

VFR = 1.1 x VFmax

75 ns

300 ns

18 V

2/8

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