2N6515(2001) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

2N6515
(Rev.:2001)

High Voltage Transistors

ON Semiconductor 

NPN 2N6515 2N6517 PNP 2N6520

+VCC

+10.8 V

-9.2 V

PULSE WIDTH ≈ 100 µs

tr, tf ≤ 5.0 ns

DUTY CYCLE ≤ 1.0%

FOR PNP TEST CIRCUIT,

REVERSE ALL VOLTAGE POLARITIES

VCC ADJUSTED

FOR VCE(off) = 100 V

1.0 k

2.2 k

20 k

1/2MSD7000

50 Ω SAMPLING SCOPE

50

APPROXIMATELY

-1.35 V

(ADJUST FOR V(BE)off = 2.0 V)

Figure 16. Switching Time Test Circuit

1.0

0.7

0.5 D = 0.5

0.2

0.3

0.2

0.1 0.05

0.1

0.07

0.05

0.03

0.02

SINGLE PULSE

SINGLE PULSE

0.01

0.1 0.2

0.5 1.0 2.0

ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t)

ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t)

5.0 10 20

50 100 200

t, TIME (ms)

Figure 17. Thermal Response

500 1.0Ăk 2.0Ăk

5.0Ăk 10Ăk

500

200 TA = 25°C

100

TC = 25°C

50

100 ms

100 µs

10 µs

1.0 ms

FIGURE A

tP

PP

PP

20

10

CURRENT LIMIT

THERMAL LIMIT

5.0

ă(PULSE CURVES @ TC = 25°C)

SECOND BREAKDOWN LIMIT

2.0

1.0

CURVES APPLY

2N6515

0.5

BELOW RATED VCEO

2N6517, 2N6520

0.5 1.0 2.0 5.0 10 20

50 100 200 500

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

t1

1/f

DUTYĂCYCLE

+

t1Ăf

+

t1

tP

PEAK PULSE POWER = PP

Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data

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