STPS80H100TV Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS80H100TV Datasheet PDF : 4 Pages
| |||
STPS80H100TV
Fig. 3: Non repetitive surge peak forward current Fig. 4: Relative variation of thermal impedance
versusoverloadduration(maximum values, perdiode). junction to case versus pulse duration (per diode).
IM(A)
500
400
300
200
100 IM
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=50°C
Tc=75°C
Tc=110°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
5E+0
Fig. 5: Reverse leakage current versus reverse Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
voltage applied (typical values, per diode).
IR(µA)
1E+4
1E+3
Tj=125°C
1E+2
1E+1
1E+0
1E-1
0
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100
C(nF)
5.0
1.0
0.1
1
2
F=1MHz
Tj=25°C
VR(V)
5
10
20
50 100
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
500
100
10
Tj=125°C
Tj=25°C
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
3/4
Share Link: 