STD616A Ver la hoja de datos (PDF) - STMicroelectronics
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STD616A Datasheet PDF : 6 Pages
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STD616A
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
6.25
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0 V)
VCE = 1000 V
VCE = 1000 V Tj = 125 oC
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VEBO
Emitter-Base Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 100 mA
IE = 1 mA
IC = 250 mA
IC = 0.8 A
L = 25 mH
IB = 65 mA
IB = 250 mA
VBE(sat)∗
hFE∗
Base-Emitter
Saturation Voltage
DC Current Gain
IC = 250 mA
IC = 0.8 A
IC = 200 µA
IC = 300 mA
IC = 480 mA
IC = 1.6 A
IB = 65 mA
IB = 250 mA
VCE = 5 V
VCE = 5 V
VCE = 5 V
VCE = 5 V
RESISTIVE LOAD
ton
Turn On Time
ts
Storage Time
tf
Fall Time
VCC = 250 V
IB1 = 65 mA
IC = 250 mA
IB2= -130 mA
RESISTIVE LOAD
ton
Turn On Time
ts
Storage Time
tf
Fall Time
VCC = 250 V
IB1 = 160 mA
IC = 0.8 A
IB2 = -0.4 A
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
Vcl = 300 V
IB1 = 65 mA
L = 200 µH
IC = 250 mA
IB2 = -130 mA
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
Vcl = 300 V
IB1 = 160 mA
L = 200 µH
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC = 0.8 A
IB2= -0.4 A
Min. Typ.
450
12
17
25
12
4
Max.
50
0.5
0.3
0.5
1
1.2
0.2
5
0.65
1
2.5
0.35
5
0.5
2.5
0.25
Unit
µA
mA
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
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