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BU941ZTFP Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
BU941ZTFP Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BU941ZT / BU941ZTFP / BUB941ZT
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
TO -22 0
D2PAK
1
T O-2 20F P
2.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 300 V
VCE = 300 V Tj = 125 oC
IEBO
V CL
VCE(sat )
Emitter Cut-off Current
(IC = 0)
Clamping Voltage
Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
IC = 8 A IB = 100 mA
IC = 10 A IB = 250 mA
VBE(s at)Base-Emitt er
Saturation Voltage
IC = 8 A IB = 100 mA
IC = 10 A IB = 250 mA
hF EDC Current Gain
IC = 5 A VCE = 10 V
VF
Diode Forward Voltage IF = 10 A
Functional Test
(see fig. 1)
VCC = 24 V L= 7 mH
INDUCTIVE LO AD
ts
Storage Time
VCC = 12 V L= 7 mH Vclamp = 300V
IC = 7 A IB = 70 mA
tf
Fall Time
(see fig. 3)
VBE = 0 RBE = 47
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min.
350
300
10
Typ .
15
0.5
Max.
100
0.5
20
500
1.8
1.8
2.2
2.5
2.5
Unit
µA
mA
mA
V
V
V
V
V
V
A
µs
µs
Safe Operating Area
DC Current Gain
2/8

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