BU208D Ver la hoja de datos (PDF) - STMicroelectronics
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Fabricante
BU208D Datasheet PDF : 8 Pages
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BU208D / BU508D / BU508DFI
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
T O-3 TO-218 ISO WATT218
Max 1
1
2.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES
IEBO
VCEO(sus)
Collector Cut-off
Current (VBE = 0)
Emitter Cut-off Current
(IC = 0)
Co lle ct or- Em it t er
Sustaining Voltage
VCE = 1500 V
VCE = 1500 V
VEB = 5 V
IC = 100 m A
Tj = 125 oC
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = 4.5 A
IB = 2 A
VBE(s at)∗ Base-Emitt er
Saturation Voltage
IC = 4.5 A
IB = 2 A
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 4. 5 A hFE = 2.5 VCC = 140 V
LC = 0.9 mH LB = 3 µH
VF
Diode Forward Voltage IF = 4 A
fT
Transit ion F requency IC = 0. 1 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = 5 V f = 5 MHz
Min.
700
Typ .
7
550
7
M a x.
1
2
300
1
1.3
2
Unit
mA
mA
mA
V
V
V
ms
ns
V
MHz
Safe Operating Area (TO-3)
Safe Operating Area (TO-218/ISOWATT218)
2/8
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