BU208D(1999) Ver la hoja de datos (PDF) - STMicroelectronics

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BU208D
(Rev.:1999)

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

STMicroelectronics 

BU208D / BU508DFI

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-case

Max

TO-3

1

ISO WA TT2 18

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

S ymb ol

P a ra m et er

Test Conditions

ICES Collector Cut-off

Current (VBE = 0)

VCE = 1500 V

VCE = 1500 V

Tj = 125 oC

IEBO Emitter Cut-off Current

(IC = 0)

VCEO(sus )∗ Collector-Emit ter

Sustaining Voltage

(IB = 0)

VCE(sat)∗ Collector-Emitter

Saturation Voltage

VEB = 5 V

IC = 100 m A

IC = 4.5 A

IB = 2 A

VBE(s at)∗ Base-Emitt er

Saturation Voltage

IC = 4.5 A

IB = 2 A

INDUCTIVE LO AD

ts

Storage Time

tf

Fall Time

IC = 4.5 A hFE = 2.5 VCC = 140 V

LC = 0.9 mH LB = 3 µH

VF

Diode Forward Voltage IF = 4 A

fT

Transition Frequency IC = 0. 1 A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

VCE = 5 V f = 5 MHz

Min.

700

Typ .

7

550

7

Max.

1

2

300

1

1.3

2

Unit

mA

mA

mA

V

V

V

µs

ns

V

MHz

Safe Operating Area (TO-3)

Safe Operating Area (ISOWATT218)

2/7

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