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BU208D(1999) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
BU208D
(Rev.:1999)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BU208D Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BU208D
®
BU508DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s HIGH VOLTAGE CAPABILITY
s U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
s JEDEC TO-3 METAL CASE
s NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D and BU508DFI are manufactured
using Multiepitaxial Mesa technology for
cost-effective high performance and use a Hollow
Emitter structure to enhance switching speeds.
1
2
TO-3
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
For TO-3 :
C = Tab
E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
V EBO
IC
ICM
Parameter
Collector-Emit ter Volt age (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Ptot Total Dissipation at Tc = 25 oC
Tstg St orage Temperature
Tj
Max. Operating Junction Temperature
November 1999
TO - 3
150
-65 to 175
175
Va l u e
1500
700
10
8
15
IS OW ATT 218
50
-65 to 150
150
Unit
V
V
V
A
A
W
oC
oC
1/7

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