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ILD620(2004) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
ILD620 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
IF
IFSM
Pdiss
Value
± 60
± 1.5
100
1.3
Unit
mA
A
mW
mW/°C
Output
Parameter
Collector-emitter breakdown
voltage
Collector current
Power dissipation
Derate from 25 °C
Test condition
t < 1.0 sec:
Symbol
BVCEO
IC
IC
Pdiss
Value
70
50
100
150
2.0
Unit
V
mA
mA
mW
mW/°C
Coupler
Parameter
Isolation test voltage
Package dissipation
Derate from 25 °C
Package dissipation
Derate from 25 °C
Creepage
Clearance
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
Test condition
t = 1.0 sec.
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
2.0 mm from case bottom
Part
ILD620
ILD620GB
ILQ620
ILQ620GB
Symbol
VISO
RIO
RIO
Tstg
Tamb
Tj
Tsld
Value
5300
400
400
5.33
500
500
6.67
7.0
7.0
1012
1011
- 55 to + 150
- 55 to + 100
100
260
Unit
VRMS
mW
mW
mW/°C
mW
mW
mW/°C
mm
mm
°C
°C
°C
°C
www.vishay.com
2
Document Number 83653
Rev. 1.3, 26-Apr-04

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