BM29F400B-90PC Ver la hoja de datos (PDF) - Unspecified

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componentes Descripción

Fabricante

BM29F400B-90PC

4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY

Unspecified 

BRIGHT

Microelectronics

Inc.

Preliminary BM29F400T/BM29F400B

BLOCK DIAGRAM

Vcc

Vss

/WE

/BYTE

/RESET

/CE

/OE

A0-A16

A-1

RY/BY

Buffer

State

Control

Command

Register

Erase Boltage

Generator

PGM Voltage

Generator

Chip Enable

Output Enable

Logic

DQ0-DQ15

Input/Output

Buffers

STB

Data Latch

Vcc Detector

Timer

STB

Y-Decodor

Address

Latch

X-Decoder

Y-Gating

Cell Matrix

BUS OPERATION

Table 1. Bus Operations ( BYTE = VIH)(1)

OPERATION

Electronic ID Manufacturer(2)

Electronic ID Device(2)

Read(3)

CE OE WE A0

A1

A6

A9

DQ0-DQ15

L

L

H

L

L

L

VID Code

L

L

H

H

L

L

VID Code

L

L

H

A0 A1 A6 A9 DOUT

Standby

H

X

X

X

X

X

X

High Z

Hardware Reset

X

X

X

X

X

X

X

High Z

Output Disable

Write

Verify Sector Protect(2)

L

H

H

X

X

X

X

High Z

L

H

L

A0

A1

A6

A9

DIN(4)

L

L

H

L

H

L

VID Code

Temporary Sector Unprotect

X

X

X

X

X

X

X

X

Notes:

1. L = VIL, H = VIH, X = Don't Care. See DC Characteristics for voltage levels.

2. Manufacturer and device codes may also be accessed via a command register sequence. Refer to Table 6.

3. WE can be VIL if CE is VIL, OE at VIH initiates the write operations.

4. Refer to Table 6 for valid DIN during a write operation.

RESET

H

H

H

H

L

X

H

H

VID

-4-

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