M63993FP Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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M63993FP Datasheet PDF : 10 Pages
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MITSUBISHI SEMICONDUCTORS <HVIC>
M63993FP
HIGH VOLTAGE 3PHASE BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS=15V, VDD=5V unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
IFS
Floating Supply Leakage Current
VB=VS=600V per 1 phase
—
IBS
VBS standby Current
—
ICC
VCC standby Current
—
IDD
VDD standby Current
—
VOH
High Level Output Voltage
IO=0A, VNO, VPO
14.9
VOL
Low Level Output Voltage
IO=0A, VNO, VPO
—
VIH
High Level Input Threshold Voltage VPIN, VNIN
2.1
VIL
Low Level Input Threshold Voltage VPIN, VNIN
0.6
IIH
High Level Input Bias Current
VPIN, VNIN=5V
—
IIL
Low Level Input Bias Current
VPIN, VNIN=0V
—
VUVT
VBS Supply UV Trip Voltage
7.0
VUVR
VBS Supply UV Reset Voltage
7.5
tUV
VBS Supply UV Filter Time
—
IOH
Output High Level Short Circuit Pulsed Current VPOVNO=0V, VPIN, VNIN=5V,PW<10µs
—
IOL
Output Low Level Short Circuit Pulsed Current VPOVNO=15V, VPIN, VNIN=0V,PW<10µs
—
tdLH(HO)
High Side Turn-On Propagation Delay CL=1000pF between HO – VS
250
tdHL(HO)
High Side Turn-Off Propagation Delay CL=1000pF between HO – VS
230
tr(HO)
High Side Turn-On Rise Time
CL=1000pF between HO – VS
—
tf(HO)
High Side Turn-Off Fall Time
CL=1000pF between HO – VS
—
tdLH(LO)
Low Side Turn-On Propagation Delay CL=1000pF between LO – GND
250
tdHL(LO)
Low Side Turn-Off Propagation Delay CL=1000pF between LO – GND
230
tr(LO)
Low Side Turn-On Rise Time
CL=1000pF between LO – GND
—
tf(LO)
Low Side Turn-Off Fall Time
CL=1000pF between LO – GND
—
VCIN1th
Comparator 1 Threshold Voltage
VDD=5V
0.47
tVCIN1
Comparator 1 Filter Time
—
VCIN2th
Comparator 2 Threshold Voltage
VDD=5V
2.4
tVCIN2
Comparator 2 Filter Time
—
VCOH
Comparator H Level Output Voltage ICO=500µA
4.5
VCOL
Comparator L Level Output Voltage ICO=–500µA
—
Limits
Typ.
—
0.48
—
0.5
—
—
3.0
1.5
—
100
8.0
8.5
7.5
–300
300
300
280
130
100
300
280
130
100
0.5
1.5
2.5
7.5
—
—
Max.
Unit
1
µA
—
mA
0.1
mA
—
mA
—
V
0.1
V
4.0
V
1.9
V
1.0
µA
300
µA
9.0
V
9.5
V
—
µs
—
mA
—
mA
350
ns
330
ns
—
ns
—
ns
350
ns
330
ns
—
ns
—
ns
0.53
V
—
µs
2.6
V
—
µs
—
V
0.5
V
Sep. 2000
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