DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SM6HT Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
SM6HT Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
1
Characteristics
SM6HT
Table 1. Absolute maximum rating (Tamb = 25° C)
Symbol
Parameter
PPP
P
IFSM
Peak pulse power dissipation (1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward
current for unidirectional types
Tj initial = Tamb
Tamb = 50° C
tp = 10 ms
Tj initial = Tamb
Tstg / Tj Storage and operating junction temperature range
TL Maximum lead temperature for soldering during 10 s.
1. for a surge greater than the maximum values, the diode will fail in short circuit.
Value
Unit
600
W
6
W
75
A
-65 to 175
°C
260
°C
Table 2. Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-l) Junction to leads
t(s) Rth(j-a) Junction to ambient on printed circuit on recommended pad layout
uc Table 3. Electrical characteristics (Tamb = 25° C)
d Symbol
Parameter
ro VRM Stand-off voltage
P VBR Breakdown voltage
te VCL Clamping voltage
le IRM Leakage current
so IPP Peak pulse current
b Forward voltage drop
O VF VF < 3.5 V @ IF = 50 A
- (pulse test: tp 500 µs)
t(s) IZ
Continuous regulation current
I
IF
VCL VBR VRM
VF
IRM
IPP
20
100
V
°C/W
°C/W
ucIRM @ VBR
VBR @ IR (1)
VCL @ IPP αT (2)
IZ @
te Prod Types
Marking Tamb=25° C Tamb=150° C
10/1000 µs
Tamb=50°C
max
max
min nom max
max
max
max
µA
µA
V V V V mA V A 10-4/°C mA
le SM6HT24A EMB
20.5 22.8 24 25.2
33.2 18.0 9.4
50
o SM6HT27A EPB
23.1 25.7 27 28.4
37.5 16.0 9.6
44
bs SM6HT30A ERB
2
OSM6HT36A EVB
25.6 28.5 30 31.5
41.5 14.5 9.7
40
5
1
30.8 34.2 36 37.8
49.9 12.0 9.9
33
SM6HT39A EXB
33.3 37.1 39 41.0
53.9 11.1 10.0
20
SM6HT43A EYB
36.8 40.9 43 45.2
59.3 10.1 10.1
28
1. Pulse test: tp < 50 ms
2. ΔVBR = αT x (Tamb - 25) x VBR (25° C)
2/8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]