RF2155PCBA-41X Ver la hoja de datos (PDF) - RF Micro Devices
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RF2155PCBA-41X Datasheet PDF : 10 Pages
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RF2155
3V PROGRAMMABLE GAIN POWER
AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: Standard Batwing
Features
Single 3V Supply
500mW CW Output Power
31dB Small Signal Gain
Up to 60% Efficiency
Digitally Controlled Output
Power
430MHz to 930MHz Fre-
quency Range
Applications
Analog Communication Sys-
tems
900MHz Spread Spectrum
Systems
400MHz Industrial Radios
Driver Stage for Higher Power
Applications
3V Applications
NC 1
VCC1 2
VCC2 3
GND 4
GND 5
GND1 6
RF IN 7
PD 8
16 G16
15 G8
14 RF OUT
13 GND
12 GND
11 RF OUT
10 NC
9 NC
Functional Block Diagram
Product Description
The RF2155 is a 3V medium power programmable gain amplifier IC. The
device is manufactured on an advanced Gallium Arsenide Heterojunction
Bipolar Transistor (HBT) process, and has been designed for use as the
final RF amplifier in analog cellular phone transmitters or ISM applications
operating at 915MHz. The device is self-contained with the exception of
the output matching network and power supply feed line. A two-bit digital
control provides 4 levels of power control, in 8dB steps.
Ordering Information
RF2155
3V Programmable Gain Power Amplifier
RF2155PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
9GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev B9 DS080128
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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