BUL45D2 Ver la hoja de datos (PDF) - Motorola => Freescale

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BUL45D2

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

Motorola => Freescale 

BUL45D2

100

VCE = 1 V

80

60

TJ = 125°C

TJ = 25°C

TYPICAL STATIC CHARACTERISTICS

100

VCE = 5 V

80

60

TJ = 125°C

TJ = 25°C

40

TJ = – 20°C

20

40

TJ = – 20°C

20

0

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

0

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volt

4

TJ = 25°C

3

2

5A

1

3A

2A

4A

1A

IC = 500 mA

0

0.001

0.01

0.1

1

10

IB, BASE CURRENT (AMPS)

Figure 3. Collector Saturation Region

10

IC/IB = 5

TJ = 25°C

1

TJ = 125°C

TJ = – 20°C

0.1

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector–Emitter Saturation Voltage

10

IC/IB = 10

10

IC/IB = 20

1

TJ = – 20°C

TJ = 125°C

TJ = 25°C

0.1

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector–Emitter Saturation Voltage

1

TJ = – 20°C TJ = 25°C

TJ = 125°C

0.1

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector–Emitter Saturation Voltage

4

Motorola Bipolar Power Transistor Device Data

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