2N2369A Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

2N2369A

HIGH-SPEED SATURATED SWITCH

STMicroelectronics 

2N2369A

HIGH-SPEED SATURATED SWITCH

DESCRIPTION

The 2N2369A is a silicon planar epitaxial NPN tran-

sistor in Jedec TO-18 metal case. It is designed spe-

cifically for high-speed saturated switching applica-

tions at current levels from 100 µA to 100 mA.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

VCB O

VCE S

VCE O

VEB O

IC

ICM

Pt ot

Tstg, Tj

Parameter

Collector-base Voltage (IE = 0)

Collector-emitter Voltage (V BE = 0)

Collector-emitter Voltage (I B = 0)

Emitter-base Voltage (IC = 0)

Collector Current

Collector Current (10 µs pulse)

Total Power Dissipation at Tamb ≤ 25 °C

at T c ase ≤ 25 °C

at T c ase ≤ 100 °C

Storage and Junction Temperature

November 1988

Value

40

40

15

4.5

0.2

0.5

0.36

1.2

0.68

– 65 to 200

Unit

V

V

V

V

A

A

W

W

W

°C

1/6

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