STK11C88-3S45I(1999) Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
STK11C88-3S45I Datasheet PDF : 9 Pages
| |||
STK11C88-3
SRAM READ CYCLES #1 & #2
NO.
1
2
3
4
5
6
7
8
9
10
11
SYMBOLS
#1, #2
Alt.
tELQV
tAVAVf
tAVQVg
tGLQV
tAXQXg
tELQX
tEHQZh
tGLQX
tGHQZh
tELICCHe
tEHICCLd, e
tACS
tRC
tAA
tOE
tOH
tLZ
tHZ
tOLZ
tOHZ
tPA
tPS
PARAMETER
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold after Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
Note f: W must be high during SRAM READ cycles and low during SRAM WRITE cycles.
Note g: I/O state assumes E and G < VIL and W > VIH; device is continuously selected.
Note h: Measured ± 200mV from steady state output voltage.
SRAM READ CYCLE #1: Address Controlledf, g
ADDRESS
DQ (DATA OUT)
5
tAXQX
2
tAVAV
3
tAVQV
DATA VALID
SRAM READ CYCLE #2: E Controlledf
ADDRESS
E
6
tELQX
2
tAVAV
1
tELQV
(VCC = 3.0V-3.6V)
STK11C88-3-45 STK11C88-3-55
UNITS
MIN MAX MIN MAX
45
55
ns
45
55
ns
45
55
ns
20
25
ns
5
3
ns
5
5
ns
15
20
ns
0
0
ns
15
20
ns
0
0
ns
45
55
ns
11
tEHICCL
7
tEHQZ
G
DQ (DATA
ICC
4
8
tGLQV
tGLQX
10
tELICCH
STANDBY
ACTIVE
9
tGHQZ
DATA VALID
July 1999
5-13
Share Link: 