AS8E32K32 Ver la hoja de datos (PDF) - Austin Semiconductor

Número de pieza

componentes Descripción

Fabricante

AS8E32K32

32K x 32 EEPROM

Austin Semiconductor 

AUSTIN SEMICONDUCTOR, INC.

AS8E32K32

32K x 32 EEPROM

CAPACITANCE TABLE (1)

VIN = 0V, f = 1MHz, TA =25ºC

Symbol Parameter

CADD A0-A14 Capactiance

COE OE\ Capactiance

CWE, CCE WE\ and CE\ Capactiance

CIO I/O 0 - I/O 31 Capactiance

1. This parameter is guaranteed but not tesed

Maximum

24

24

6

12

Units

pF

pF

pF

pF

Notes

4, 14

4, 14

4, 14

4, 14

TRUTH TABLE

MODE

Read

Write (2)

Standby/Write

Write Inhibit

Write Inhibit

Output Disable

CE\

OE\

WE\

I/O

VIL

VIL

VIH

DOUT

VIL

VIH

VIL

DIN

VIH

X (1)

X

High Z

X

X

VIH

X

VIL

X

X

VIH

X

High Z

AC TEST CONDITIONS

Current Source

Device

-

Under

Test

+

Ceff = 50pf

Current Source

IOL

+

IOH

Vz = 1.5V

(Bipolar

Supply)

Test Specifications

Input pulse levels....................................VSS to 3V

Input rise and fall times.......................................5ns

Input timing reference levels.............................1.5V

Output reference levels.....................................1.5V

Output load................................See Figures 1 and 2

Notes:

Vz is programable from -2V to + 7V.

I and I programmable from 0 to 16 mA.

OL

OH

Vz is typically the midpoint of VOH and VOL.

IOL and IOH are adjusted to simulate a typical resistive load

circuit.

AS8E32K32

REV. 1.5 9/99

4

Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.

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