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1718-32L Ver la hoja de datos (PDF) - GHz Technology

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1718-32L Datasheet PDF : 2 Pages
1 2
1718-32L
32 Watt - 24 Volts, Class C
Microwave 1750 - 1850 MHz
GENERAL DESCRIPTION
The 1718-32L is a COMMON BASE transistor capable of providing 32
Watts of Class C, RF output power over the band 1750-1850 MHz. This
transistor is designed for Microwave Broadband Class C amplifier
applications. It includes Input and Output prematching and utilizes Gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. The transistor uses a fully hermetic High Temperature Solder
sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
117 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
12 A
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55KT - STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1750-1850 MHz
Vcb = 24 Volts
Pin = 7 Watts
As Above
F = 1750 MHz, Pin = 7 W
MIN
32
6.5
TYP
7.0
40
MAX UNITS
Watt
7
Watt
dB
%
3:1
BVces
BVebo
HFE
Cob
θjc
Collector to Emitter Breakdown Ic = 20 mA
50
Emitter to Base Breakdown
Ie = 15 mA
3.5
Current Gain
Vce = 5 V, Ic = 500 mA
10
Output Capacitance *
Thermal Resistance
F = 1 MHz, Vcb = 28V
* Not measureable due to Output Prematch within the package
Issue January 1996
Volts
Volts
100
pF
1.5
oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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