TSMF1000 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
TSMF1000 Datasheet PDF : 9 Pages
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TSMF1000/1020/1030/1040
Vishay Semiconductors
VISHAY
Parameter
Radiant Intensity
Radiant Power
Temp. Coefficient of φe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of λp
Rise Time
Fall Time
Test condition
IF = 20 mA
IF = 100 mA, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
Symbol
Min
Ie
2.5
Ie
φe
TKφe
ϕ
λp
∆λ
TKλp
tr
tf
Typ.
5
25
35
- 0.6
± 17
870
40
0.2
30
30
Max
Unit
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
200
180
160
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
16187
Tamb - Ambient Temperature ( ° C )
Figure 1. Power Dissipation vs. Ambient Temperature
10000
t p /T = 0.005
0.01
1000
100 0.2
0.5
DC
10
0.1
Tamb < 60°C
0.02
0.05
1
0.01 0.1
1
10
100
95 9985
t p - Pulse Length ( ms )
Figure 3. Pulse Forward Current vs. Pulse Duration
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
16188
Tamb - Ambient Temperature ( ° C )
Figure 2. Forward Current vs. Ambient Temperature
10 4
10 3
10 2
10 1
10 0
0
1
2
3
4
94 8880
VF - Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
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2
Document Number 81061
Rev. 6, 21-May-03
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